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We studied the effects of ultraviolet (UV) light and the electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotube thin-film transistors (SB-IGZO/SWNT TFT), compared with those of solution-based IGZO TFT. Of these devices, the SB-IGZO/SWNT TFT had excellent photo-induced current-sensitivity under illumination and significantly slower recovery of the transfer characteristics...
Ferroelectric thin films of sol-gel-derived Pb(Zr x , Ti 1-x )O 3 (lead-zirconate-titanate, PZT) were obtained by the low-temperature processing employing oxygen-plasma treatment. The as-coated PZT films were annealed in oxygen ambience at 450 o C, followed by oxygen-plasma treatment at 200 o C, which gave rise to the ferroelectric hysteresis. Annealing...
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