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Advanced circuit component, packaging, and thermal management technologies are critically evaluated for developing efficient integrated DC-DC power converters; and, important challenges and potential limitations are identified. It is shown that heterogeneous chip-scale integration of GaN power FETs, silicon CMOS control, integrated power inductors, and microchip capacitors using the new high-density,...
In order to overcome the drawback of traditional tolerance design only focus on cost of manufacturing, but few consider product Life Cycle Cost, a new tolerance design methodology based on LCC (TD Based On LCC) was created. TD Based On LCC expands tolerance optimization based on the manufacturing cost to the product life cycle cost and The objective is to improve product quality to the six sigma level...
In this paper, a new Design for Six Sigma(DFSS) integrating Artificial Neural Network approach is presented for improving quality and manufacturability simultaneously. Followed the neural network based on optimal DFSS method is employed as a tool in cutting parameters optimization. The results showed the roller burnishing formation can be controlled by adjusted cutting parameters with DFSS. The experiments...
Traditional Quality and Reliability Engineering often are separated, which cause lacks powerful methods and tools on the earlier development stage and takes high cost and long time. This paper proposes a new integrated quality and reliability methodology based on Life Cycle Six Sigma (LCSS) to assure product good quality, high reliability, low LCC, low price and short lead time simultaneously. A set...
This paper reports the design and implementation of a RF GaN Oscillator for test in space. This circuit/system will be applied in a space test of the European Space Agency and it will be one of the first experiments in space using European GaN devices. The main objective will be to study the material radiation hardness. In this paper we will present the proposed circuit for test and its main design...
A 1.5 A normally-off GaN transistor for power applications in p-type GaN gate technology with a modified epitaxial concept is presented. A higher threshold voltage is achieved while keeping the on-state resistance low by using an Al-GaN buffer instead of a GaN buffer. Additionally, the AlGaN buffer acts as a back-barrier and suppresses source-drain punch-through currents in the off-state. P-GaN gate...
A 1.5 A normally-off GaN transistor for power applications in p-type GaN gate technology with a modified epitaxial layer structure is presented. A higher threshold voltage is achieved while keeping the on-state resistance low by using an AlGaN buffer instead of a GaN buffer. Additionally, the AlGaN buffer acts as a back-barrier and suppresses source-drain punch-through currents in the off-state. P-GaN...
Finite element simulations of novel InGaN solar cells, requiring no p-type InGaN, were carried out using the commercial software package APSYS. Simulations show that efficient, compositionally graded p-GaN/n-InxGa1-xN solar cells can be achieved, provided the graded layer is confined within the depletion region. These compositionally graded solar cells can be used as the top cell in an InGaN/Si double-junction...
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