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The mechanical properties of Os–B compounds containing different boron contents have been investigated systemically by first-principles calculations. Two previously unreported crystal structures of Os 2 B 5 and OsB 3 , crystallizing in space groups R3m and P-6m2 respectively, are determined using the ab initio evolutionary structure prediction. The calculated elastic constants,...
A high-temperature physical vapor transport (HTPVT) method was used to grow highly dense SiC ceramics free of sintering aids, and the effects of growth time and temperature upon the grain size, growth rate, thickness and orientation of silicon carbide were explored. Silicon carbide ceramics with a thickness of 8mm and a bulk density of 3.208g/cm −3 were obtained after 4h of growth. The silicon...
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