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Cu2ZnSnSe4 thin-films have been produced by a two-stage (2SSS) growth process, at annealing temperatures of 400°C–500°C, with different compositions of metallic precursors/Se, in order to reduce the major secondary phases ZnSe and CuxSey. Raman scattering is used to determine the phases in the thin-films. Under proper preparation conditions CZTSe modes are found to dominate, while the common secondary...
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