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In this paper, we will propose a new NAND type SONOS cell structure with high efficiency Source Side Injection programming and F-N erase. This cell is characterized in high scaling abilities, fast program/erase speeds and very satisfactory data retention performances. In consideration of the threshold voltage saturation of the SONOS cell during erase, we use the modified erase bias configuration,...
In this paper, one of the future nonvolatile memory candidates, SONOS with p+-poly gate, has been fully characterized in cell program/erase operation and data retention performance. Novel source-side injection programming and F-N erase schemes have been utilized on both n+- and p+-poly gate, and its characteristics are very satisfactory and can be easily used as a state-of-the-art flash memory. For...
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