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This study examines the wetting properties and interfacial reactions between molten Sn–3.0wt%Ag–0.5wt%Cu solder and Ni–Co alloys to evaluate Ni–Co alloys as alternative diffusion barrier layer materials in flip chip packaging for Cu/low k integrated circuits. The wetting properties of Ni–Co alloys with Sn–3.0wt%Ag–0.5wt%Cu solder are better than the currently used Ni–7wt%V. With increased Co, the...
Because of the relatively low reactivity with solders, Ni-based materials are the most commonly used diffusion barrier layer materials in flip chip packaging technology for Al metallization integrated circuits. However, due to the high diffusivity of Cu, the diffusion barrier materials need to be re-evaluated for Cu/low k integrated circuits. Some literatures had indicated that Co is with superior...
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