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Resistive random access memory (ReRAM) has drawn lots of attention for nonvolatile memories. Among various resistive switching materials and phenomena, solid state electrolytes, such as copper sulfide and Ag-Ge-Se devices, show interesting properties for memory or logic application. But too small turn on voltage (Vset is below 0.3 V) could be positive in point of power consumption but should be improved...
Nonvolatile memories (NVMs) based on an instantaneous resistance change when an electric bias is applied are very attractive for future memory applications. Here, we report the fabrication and electrical characterization of mum-sized Cu2S NVM devices. With stoichiometric Cu2S films grown by anodic polarization, we can generate consistent and reproducible resistance switching devices. The fabricated...
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