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To gain knowledge about the transduction mechanisms involved in the sensitivity of field effect gas sensors towards non-hydrogen containing substances, such as O2, NO and CO, the sensor signal characteristics during exposure of some conceptually different model sensors to these as well as hydrogen containing gases have been investigated. The MOS capacitor based model sensors employ different combinations...
The temperature dependence of the sensor response towards CO of SiC-FET sensors has been studied by combining in situ DRIFT spectroscopy and sensor response measurements. The DRIFT spectroscopy studies have been performed on a model sensor representing the top layer of a SiC-FET sensor with porous Pt gate. Adsorbates on the model sensor have been studied at varying temperatures and gas concentrations,...
An investigation of the influence and role of oxygen in the detection of non-hydrogen containing substances with Pt/SiO2/SiC based MOS field effect sensors, employing new model systems, has been carried out. With the use of a novel intermediate layer, by which the direct influence of hydrogen on the sensor response can be markedly reduced, the part of the sensor response which is not directly related...
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