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Novel niobium heterostructure devices that integrate aluminum, hafnium, and chromium oxide are designed and constructed by sputtering and atomic layer deposition. The devices are examined for use in resistive switching (RS) memory cells. Specifically, Nb–AlOx–HfOx–AlOx–Nb is directly compared with Nb–AlOx–HfOx–CrOx–AlOx–Nb. Stable RS is observed in both cases and the conduction mechanisms are analyzed...
This paper initially describes how an inferred context-free (stochastic) grammar can be used to verify command transmissions and serve as a hedge against a successful cyber-attack. The remainder of the paper addresses a computational problem not amenable to closed-form solution; namely, the hard real-time (~57 usec) synthesis of a desired waveform through the adaptive modification of a carrier wave...
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