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Recently, SRAM for sub-threshold operation is in developing stage for ultra-low power applications and portable devices. It aims to support high operating margins and high performance with low power applications under process and temperature variations. In this paper, a novel FinFET based 9T SRAM cell is proposed, which employs single ended bit-line scheme to perform read and write operations in the...
Memory occupies more than 70 percent of area in today's system on chip and the trends continue to be increases in coming years. As the technology is scaling the bulk MOSFET faces various challenges which lead to increased leakage. Below 32nm technology, FinFET is the most promising substitute to bulk CMOS technology because of reduced short channel effect. The proposed 10T SRAM cell is designed using...
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