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The effects of hydrogen incorporation in the active layer of amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs) on device characteristics and instability under positive bias stress (PBS) and positive bias temperature stress (PBTS) are studied. To control the amount of incorporated hydrogen, rapid thermal annealing (RTA) treatment is conducted on the gate insulator layer before active layer deposition...
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