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Ultra-low-energy ion implantation of silicon with a hydrogen-terminated (001) surface was carried out using a mass-separated 31 P + ion beam. The ion energy was 30eV, the displacement energy of silicon, and the ion doses were 6×10 13 ions/cm 2 . Annealing after the implantation was not carried out. The effects of ion implantation on the surface electrical state of silicon...
Mass-separated ultra-low-energy oxygen ion beams were irradiated to the single-walled carbon nanotubes (SWCNTs) under an ultra-high-vacuum pressure of 10 −7 Pa for the purpose of achieving n-type conduction of nanotubes. The ion beam energy was 25eV, which was close to the displacement energy of graphite. The incident angle of the ion beam was normal to the target nanotube. The ion dose ranged...
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