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In this letter, an 8-Mb phase-change random access memory (PCRAM) chip has been developed in a 130-nm 4-ML standard CMOS technology based on a Resistor-on-Via-stacked-Plug (RVP) storage cell structure. This phase-change resistor is formed after CMOS logic fabrication. PCRAM can be embedded without changing any logic device and process. The memory cell selector is implemented by a standard 1.2-V nMOS...
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