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The effect of lattice damage generated by the H2+-implantation on exfoliation efficiency in 6H-SiC wafers is investigated. <0001> 6H-SiC wafers were implanted with 134keVH2+ ions to ion fluences from 1.5×1016 to 5×1016 H2+ cm−2 and subsequently annealed at temperatures from 973K to 1373K. The samples were studied by a combination of optical microscopy and transmission electron microscopy. Only...
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