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In this letter, high-performance low-temperature poly-Si p-channel thin-film transistor with metal-induced lateral- crystallization (MILC) channel layer and TaN/HfO2 gate stack is demonstrated for the first time. The devices of low threshold voltage VTH ~ 0.095 V, excellent subthreshold swing S.S. ~83 mV/dec, and high field-effect mobility muFE ~ 240 cm2/V ldr s are achieved without any defect passivation...
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