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In article number 1802995, Guoqiang Li and co‐workers demonstrate a 2D GaN with wellcontrolled lattice structure and bandgap on graphene/Si hetero‐structure. The bandgap for 2D GaN in P63MC and R3m structure is determined to be ≈4.65 and ≈4.18 eV, respectively. The 2D GaN shows a great potential for the development of deep ultraviolet devices.
2D group‐III nitride materials have shown a great promise for applications in optoelectronic devices thanks to their thickness‐dependent properties. However, the epitaxial growth of 2D group‐III nitrides remains a challenge. In this work, epitaxial growth of 2D GaN with well‐controlled lattice structures and bandgaps is achieved by plasma‐enhanced metal organic chemical vapor deposition via effective...
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