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This paper reviews the fabrication technology and performance characteristics of current-injected GaN-based vertical-cavity surface-emitting lasers (VCSELs) with hybrid distributed Bragg reflectors (DBRs). The GaN-based VCSEL consists of a ten-pair TaO/SiO top DBR, a 7 λ-thick optical cavity embedded with 10 InGaN/GaN multiquantum wells, and a 29-pair AlN/GaN bottom DBR. Lasing action is observed...
We demonstrated CW current injection of GaN VCSELs with hybrid mirrors at room temperature. The laser characteristics, such as temperature dependent laser threshold current, spontaneous emission coupling factors, have been measured and discussed.
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