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The Schottky diodes of a Platinum (Pt) thin film on p-silicon nanowires (p-SiNWs) tips were fabricated. The current-transport mechanism of Pt/p-SiNWs Schottky diodes was defect-assisted tunneling (TU). Each silicon nanowire could be seen as a core/shell structure with a monocrystalline silicon core wrapped by a thin natural amorphous silicon oxide shell, which induced a large number of defects and...
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