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We investigate the inversion charge for sub-20nm MOSFETs. The inversion charge Qi calculated by using the standard analytical model is compared with that using S/P model, which solves the Schrödinger and Poisson equations self-consistently. Test devices are low operating power bulk nMOSFETs having physical gate lengths Lg from 22 to 18nm. It is found that |Qi| using the analytical model is 24%–40%...
In this work, we investigate the quantum effects of the inversion layer for sub-20nm MOSFETs. In ITRS reports, inversion-layer EOTs are calculated by using an analytical program: MASTAR. In the program, the electrostatic potentials in the inversion-layer are estimated by using a triangular quantum well approximation. We evaluate an accuracy of the approximation and estimate the inversion-layer EOTs...
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