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Two high-efficiency Class E MMIC power amplifiers designed at 4 GHz using AlGaN/GaN HEMT technology are presented. The first circuit was designed using a 0.5 mm (4 × 125 μm) HEMT and when biased at 25 V drain bias it produced 61 % PAE, 33.8 dBm of output power and maximum gain of 14.8 dB. The second circuit used a 1 mm (8 × 125 μm) HEMT and at 30 V drain bias it produced 57% PAE, 36 dBm of output...
We report the performance of AlGaN buffer GaN high-electron mobility transistors (HEMTs) grown by metal-organic chemical vapor deposition. GaN HEMTs on high-quality AlGaN buffer were grown on SiC substrates. The incorporation of an AlGaN buffer into the GaN HEMT significantly improves channel confinement and suppresses the short-channel effect. Advanced deep-recess V-gate structures were employed...
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