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ZnO:Al films were deposited at 70°C at a fixed −1.1V potential onto ITO substrates from a 0.01M Zn(NO 3 ) 2 +x Al(NO 3 ) 3 ·9H 2 O electrochemical bath, with Al 3+ concentrations between 0 and 2mM. Electrodeposition conditions were optimized to remove bubbles, increase grain size homogeneity and ensure adherence. Films were characterized by field emission...
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