The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In article number 1805284, Xiaobing Yan, Peng Zhou, and co‐workers demonstrate that the ordered arrangement of self‐assembled PbS quantum dots (QDs) enhances the localized electrical field in a memristor device, which can efficiently guide the growth direction of the conducting filaments and improve the uniformity of the switching parameters of resistive random access memory. Furthermore, biosynaptic...
With the advent of the era of big data, resistive random access memory (RRAM) has become one of the most promising nanoscale memristor devices (MDs) for storing huge amounts of information. However, the switching voltage of the RRAM MDs shows a very broad distribution due to the random formation of the conductive filaments. Here, self‐assembled lead sulfide (PbS) quantum dots (QDs) are used to improve...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.