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In article number 1901971, Mario Lanza and co‐workers review the main challenges and potential solutions towards the fabrication of field effect transistors with 2D semiconducting channels. The scalability and compatibility of these materials with the requirements imposed by the semiconductor industry are discussed, and some recommendations are proposed.
The continuous miniaturization of field effect transistors (FETs) dictated by Moore's law has enabled continuous enhancement of their performance during the last four decades, allowing the fabrication of more powerful electronic products (e.g., computers and phones). However, as the size of FETs currently approaches interatomic distances, a general performance stagnation is expected, and new strategies...
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