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A 160nm Al 0.08 In 0.018 Ga 0.902 N layer was grown by metal-organic chemical vapour deposition (MOCVD) on sapphire (0001) with thick (>1μm) GaN intermediate layer. The chemical compositions can be determined by Rutherford backscattering (RBS). The perpendicular and parallel strain of Al 0.08 In 0.018 Ga 0.902 N layer was derived to be zero by using...
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