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In this letter, we investigate the performance of single-period InAs-GaAs quantum-dot (QD) infrared photodetectors, in which the single-period QD is sandwiched by different thicknesses of the undoped GaAs confinement layers. By using a 5-nm p-type GaAs layer as a current blocking barrier, the investigated three devices exhibit no response, the highest response, and the medium response, respectively...
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