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We present a fully reconfigurable fourth-order SOI RF-photonic filter with a tunable bandwidth of 0.9-5 GHz, FSR >; 600 GHz, out-of-band rejection >; 38 dB, and compact size (0.15 mm2) using high-Q resonator-based components.
We design and demonstrate a temperature-insensitive third-order coupled-resonator filter in the silicon-on-insulator platform for on-chip terabit/s optical interconnects. Optimum filter design enables up to 21 flat-band filter channels with more than 10 dB through-port extinction, more than 0.75-nm 3-dB bandwidth, and less than 1-dB insertion loss. By overlaying a negative thermo-optic coefficient...
A compact coupled-resonators flat-band filter with a large bandwidth (~3.3 nm), large free-spectral range (~18 nm), low crosstalk (<-12 dB) and negligible insertion loss (<0.5 dB) is demonstrated on a silicon-on-insulator platform with focused applications for on-chip optical interconnects.
A traveling-wave resonator structure with interferometric-coupling scheme is shown to have the capability of supporting both over-coupled and critically-coupled modes, simultaneously. This device is demonstrated in SOI with an integrated microheater to tune its coupling. The application of this device for nonlinear optics is discussed.
A compact coupled-resonators flat-band filter with a large bandwidth (~3.3 nm), large free-spectral range (~18 nm), low crosstalk (Lt-12 dB) and negligible insertion loss (Lt0.3 dB) is demonstrated on a silicon-on-insulator platform with focused applications for on-chip optical interconnects.
Silicon-on-insulator (SOI) finite-size CROWs with optimized flat-band spectrum, excellent group-delay response, and compact size are experimentally demonstrated using direct correspondence with ladder-type LC circuits. Sensitivity analysis attributes residual distortions to non-ideal fabrication rather than coupling-induced-frequency-shifts.
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