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Resistive Random‐Access Memory
In article number 2202951, Shuxia Ren, Jinjin Zhao, and co‐workers develop a flexible transparent photoelectric resistive switching memory based on perovskite quantum dots and graphene oxide hybrid films. The high‐efficiency resistive switching behaviors are mainly attributed to the accelerated migration of ions within the hybrid film under illumination. This research...
Perovskite resistive random‐access memory (RRAM) is a promising candidate for next‐generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF ratio, low‐cost fabrication, and good photoelectric regulation performance. In this work, a flexible transparent CsPbBr3 quantum dots (QDs) mixed in graphene oxide (GO) RRAM device is introduced, which is controllable by both an electric...
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