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Phase change RAM (PRAM) is an emerging memory technology that has fast read access time, low standby power, and high storage density. Multi-level Cell (MLC) PRAM has even higher storage density but suffers from low reliability and long write latency. This paper investigates a set of cost-effective design solutions for enabling MLC PRAM to be used as a mainstream memory technology. Earlier, we had...
Resistive RAM (ReRAM) has fast access time, ultra-low stand-by power and high reliability, making it a viable memory technology to replace DRAM for main memory. The 1-transistor-1-resistor (1T1R) ReRAM array has density comparable to that of a DRAM array and the advantages of lower programming energy and higher reliability compared to the ultrahigh density ReRAM cross-point array. In this paper, we...
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