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A new approach of self-compliance bipolar switching of tantalum embedded amorphous oxide for highly reliable and uniform switching was investigated. Based on analytic results, the formation of a metallic tantalum embedded amorphous oxide film was confirmed. Robust characteristics of over cycles with no change at both resistance states under voltage pulses were achieved due to the self-compliance function,...
We demonstrate resistive random access memory (RRAM) architecture with bi-layered switching element for reliable resistive switching memory. Based on the modulated Schottky barrier modeling, several key functions to achieve a realiable bipolar switching property are extracted. Our device shows an excellent memory performance such as enduracne of 1011 cycles at 30ns, data retention of >104s at 200°C,...
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