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SiC films were deposited by radio frequency (r.f.) plasma sputtering (SPF-312H) on Ti6Al4V substrate with a pre-deposited Cr bond layer. The effects of sputtering parameters on the microstructure and the chemical bonds of the SiC films were investigated using X-ray photoelectron spectroscope (XPS, Perkin Elmer ESCA5600), atomic force microscopy (AFM, HITACHI WAO200), scanning electronic microscopy...
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