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We report MOSFETs with 25-nm gate length (Lg), extremely thin 2.5 nm InAs channels and 0.7/3.0 nm (physical) Al2OxNy/ZrO2 gate dielectrics, and 12 nm In0.53Ga0.47As vertical spacers in the raised epitaxial source/drain. The FETs establish key new DC performance records, at VLSI-relevant gate lengths (25 nm), including 0.50 mA/µm on-current (at 100 nA/µm Ioff and 0.5 V VDD) and 77 mV/dec. subthreshold...
We describe interconnect features for Intel's 22nm high-performance logic technology, with metal-insulator-metal capacitors and nine layers of interconnects. Metal-1 through Metal-6 feature a new ultra-low-k carbon doped oxide (CDO) and a low-k etch stop. Metal-7 and Metal-8 use a low-k CDO. New materials and process optimization provide 13–18% capacitance improvement. Single-exposure patterning for...
An edge traces technique in the wafer level is proposed and implemented in this work, which can be applied to the fabrication of the stack chip. Experiments were conducted by stacking four test chips 100μm thick, and the configuration of the pad is based on the memory chip from the electronics company. The chips for stacking were fabricated successfully through dicing the wafer and curing the adhesives...
An efficient edge-tracing technique at the wafer-level is proposed and implemented in this paper. The proposed method can be applied to the fabrication of a stacked chip. Experiments were conducted by stacking four test chips each 100--thick, and the configuration of the pad is based on a memory chip from an electronics company. The chips for stacking were fabricated by half-dicing the wafer...
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