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By means of a hybrid magnetic–electric barrier (MEB) on the top of the semiconductor InAs/AlxIn1−xAs heterostructure, a spin filter can be obtained. In this work, we introduce a δ-doping into this MEB device by molecular beam epitaxy or metal-organic chemical-vapor deposition, to manipulate the spin filtering. With the help of the improved transfer-matrix method and Landauer–Bűttiker theory, transmission...
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