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In this paper, we introduce a sample preparation technique for two-dimensional (2D) dopant concentration profiling in silicon based devices. Selective chemical etching will be shown in a series of tunneling field-effect transistors (FETs). It is experimentally proven that this method offers a high success rate and provides a simple route to Transmission Electron Microscopy (TEM) study of 2D dopant...
Using scanning transmission electron microscope with high resolution electron energy loss spectroscopy, the chemical nature of the percolation path formed in ultrathin SiON layers is studied for digital and analog breakdown (BD). Our results show that the diameter of the percolation path dilates from 30 nm to 55 nm as the gate leakage current increases from 2 muA to 40 muA. Oxygen deficiency in the...
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