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We propose a new InP-based comb generator for optical OFDM transmission. The device integrates a Mach-Zehnder modulator inside an amplified ring. We demonstrate a 6-line frequency comb which is tunable in wavelength and spacing.
Summary form only given. The quantum efficiency of negative electron affinity (NEA) GaAs photocathodes mainly depends on the performance of GaAs material. Usually, the uniform-doping structure are used in the photoemissive layer of cathodes. To increase quantum efficiency of cathodes, the varied-doping structure are used. The quantum efficiency can be increased by using the varied-doping structure...
This paper presents two fully integrated transmitters with embedded antennas to demonstrate on-wafer wireless testing for the first time. The proposed transmitters are intended to not only replace the I/O pins during manufacturing testing but also to serve as process monitoring circuits. The first RF transmitter, operating at 5.5 GHz, utilizes a current-reuse LC oscillator to minimize complexity and...
We present two-dimension gallium nitride (GaN) quantum-well (QW) diode laser (LD) simulation using Rsoft LaserMOD. The optical mode patterns are calculated and analyzed by the transfer matrix and Ritz Iteration. Our study is focus on the ghost mode reduction in the GaN laser design and laser performance.
We present Gallium arsenide (GaAs) Photodiode (PD) simulation using Rsoft LaserMOD. The detector responsivity from 600 to 900 nm and frequency response at 633 nm and 850 nm are calculated and analyzed. Our goal for this study is to develop a PD model from the material level, which can then be used with circuit simulators. To validate our model, we simulate at 850 nm first and compare to known performance...
A new structure for coupled-cavity lasers operating at 1.25 ?m wavelength is presented. Using chemical etching, we made a three-cavity laser from an index-guided channelled-substrate Fabry-Perot laser. It oscillates in a single longitudinal mode with a side-mode suppression ratio of 200:1 in the pumping current range of 120 mA to 220 mA. The same mode was maintained at a fixed current of 160 mA as...
We present a new structure of AlGaAs/GaAs DH lasers consisting of two oppositely facing terraced-substrate cavities in series. Polarisation change at the junction results in internal reflection and produces a mode-selection effect. A stable single longitudinal mode is observed over a wide current range from 100 to 150 mA. The dominant lasing mode is locked over a 7? temperature variation. The lowest...
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