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GeO2/Ge and high-k(LaYO3)/Ge interfaces have been significantly improved by suppressing GeO desorption and treating Ge surface with radical nitrogen. With the Ge- intimate material selection and interface conscious process flow, we have achieved that the peak hole mobility of PtGe source/drain p-MOSFET is about 370 cm2/Vsec in FUSI/GeO2/Ge. Furthermore, metal/n-Ge ohmic characteristic has been achieved...
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