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(TiO2)x(Al2O3)1−x (x=0.7,0.8,0.9) gate dielectrics were deposited on Ge by atomic layer deposition using trimethylaluminium and Ti isopropoxide. The interfacial properties and band alignment were investigated by means of transmission electron microscopy (TEM) and X-ray photoemission spectroscopy. High-resolution TEM results show that the (TiO2)0.8(Al2O3)0.2 film annealed at 500°C is amorphous with...
We study numerically and analytically a binary mixture of quantum dots exhibiting gain and loss. For a mixture of gain quantum dots and silver nanoparticles, we find conditions when the composite shows negative dielectric constant operation and lossless operation. The composites of this kind may be used for dense integration of photonic components as well as modulation and switching in optical interconnect...
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