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In article number 1909659, Liang He, Jun Wang, and co‐workers prepare a high‐performance thin film heterojunction photodetector, which is the combination of a 3D topological insulator (Bi2Se3) and MoO3. The results demonstrate that heat annealing can significantly improve the properties of the device. This detector has broadband detection capabilities, with an ultrafast response time and application‐level...
Infrared (IR) detection at 1300–1650 nm (optical communication waveband) is of great significance due to its wide range of applications in commerce and military. Three dimensional (3D) topological insulator (TI) Bi2Se3 is considered a promising candidate toward high‐performance IR applications. Nevertheless, the IR devices based on Bi2Se3 thin films are rarely reported. Here, a 3D TI Bi2Se3/MoO3 thin...
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