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Inverted quantum‐dot light‐emitting diodes (QLEDs) with high efficiency are demonstrated by utilizing MgZnO modified electron transport layers (ETLs). MgZnO nanoparticles (NPs) with thickness of 10 nm are inserted between ZnO and quantum dots, which reduces the injection of electrons and thus improves the balance of charge injection. Moreover, exciton quenching by ZnO nanoparticles is largely alleviated...
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