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A 45 nm high In component metamorphic In0.7Ga0.3As/In0.6Ga0.4As composite-channel high electron-mobility transistor (mHEMT) on GaAs substrate with good DC and RF performance has been developed. The structure was grown by molecular beam epitaxy and exhibits a superior electron mobility of 10200 cm2/(V.s) and a sheet density of 3.5 × 1012 cm−2 at a room temperature. A combined optical and e-beam lithography...
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