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Group‐III nitride on Si tandem solar cell structures, which are free from materials with high impacts on the environment such as group‐III arsenides or phosphides, were successfully fabricated using the surfaceactivated bonding of nitride‐based sub cells, which had been grown on (0001) GaN substrates, and (111) Si‐based sub cells. The backsides of the GaN substrates had been polished and their averaged...
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