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N-type thermoelectric bismuth telluride (Bi 2 Te 3 ) films were grown on SiO 2 /Si substrates by RF magnetron co-sputtering without intentional substrate heating. The effects of annealing temperature (150–350°C) on surface morphology, crystal structure and thermoelectric properties of the Bi 2 Te 3 films were investigated. Its crystallization was significantly...
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