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Down-flow plasma etching is mentioned instead of high-density capacitively coupled plasma (CCP) etching to prevent the control gate (CG) against physical damage during the intra-level dielectric (ILD) etch back, which is the process prior to form cobalt silicide word lines. However, owning to lack of ion bombardment, it is hard to achieve good etch uniformity. This paper presents the design of experiments...
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