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Sub-30 nm TFT CT NAND flash devices have been extensively studied. Although TFT devices were often believed to have much worse performance than bulk devices, our results show that as devices scale down to sub-30 nm, the DC characteristics (such as read current and subthreshold slope (S.S.)) approach those of the bulk devices because sub-30 nm TFT devices often contain no grain boundaries. The memory...
In NAND flash, devices are normally erased to negative Vt and then programmed to positive Vt. In this work we introduce a novel depletion-mode (normally on) buried-channel, junction-free n-channel NAND flash device. The buried-channel NAND flash shifts the P/E Vt ranges below those for the conventional surface-channel device, and is more suitable for the NAND Flash memory design. Due to the lower...
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