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An In–Ga–Zn oxide (IGZO) layer is applied, for the first time, as the semiconductor layer of a light-addressable potentiometric sensor (LAPS). The IGZO layer sputtered on the commercial ITO/glass substrate could be used as the active layer of an LAPS illuminated by a ultraviolet light-emitting diode (UV LED). In the operation of LAPS, an IGZO/ITO glass substrate with a higher photocurrent and less...
For two dimensional (2D) chemical images by light-addressable potentiometric sensor (LAPS), high photocurrent obtained in high ac frequency is the most critical criterion to have an acceptable signal-to-noise ratio in a very short time for a pixel. A simple KOH etch can be used to decrease the thickness of silicon substrate for high photocurrent. In the meantime, higher surface roughness in both sides...
LAPS with different thickness of P-type silicon wafers are first investigated for photocurrent, operation frequency of applied ac signal and pH sensing performance, respectively. A high dielectric constant material, niobium oxide (NbOx), was directly deposited as the sensing membrane by reactive radio frequency sputtering. pH sensitivity is around 60.3 mV/pH with linearity of 99.1%. Thin Si substrate...
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