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In this article, a method of nitrogen plasma treatment is proposed to achieve normally off p‐GaN/AlGaN/GaN high‐electron‐mobility transistors, and the related mechanism is proposed. A nitrogen plasma treatment is employed to deplete holes in the p‐GaN layer to change the surface characteristics. The transition of the p‐GaN layer from p‐type to n‐type results in the formation of the 2D electron gas...