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On page 5433, Yong‐Young Noh, Antonio Facchetti, Kang‐Jun Baeg, and co‐workers report that high performance ambipolar complementary inverters and ring oscillators are provided by a remarkable enhancement of both hole injection and transport for n‐channel dominant N2200 OFETs. The significant enhancement of hole mobility in N2200 OTFTs is attributed to the strong dipoles in fluorinated high‐k gate...
A remarkable enhancement of p‐channel properties is achieved in initially n‐channel dominant ambipolar P(NDI2OD‐T2) organic field‐effect transistors (OFETs) by the use of the fluorinated high‐k dielectric P(VDF‐TrFE). An almost two orders of magnitude increase in hole mobility (∼0.11 cm2 V−1 s−1) originates from a strong interface modification at the semiconductor/dielectric interface, which provides...
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