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A 2.5D three-dimensional (3D) silicon interposer with through silicon vias (TSV) was designed and fabricated. All structures are for the purpose of evaluating the design and layout, electrical testing, and to evaluate process reliability of the 2.5D interposer. Three levels are tested: chip, interposer and plastic substrate. The paper details the layout of the three levels, the principal electrical...
In this paper, a group of coplanar lines on a silicon dioxide insulating layer on a nominally doped silicon substrate is simulated and measured. Electrical parameters extracted from published data are used and lead to substantially improved agreement with measurements. In addition, several models of redistribution layer (RDL) with different shape-TSVs (through silicon vias) are simulated, along with...
Due to the differences in the thermal expansion coefficients of copper and silicon, a large thermal stress develops at the interface between a Cu-filled via and both the insulation layer and the surrounding silicon when the structure is subjected to temperature loading. In this paper four TSV geometries are considered in an effort to investigate the role of via geometry on stress relief. Thermo-mechanical...
The coefficient of thermal expansion (CTE) of metal (e.g., copper, tungsten and solder) filled in through silicon via (TSV) is a few times higher than that of silicon. Thus, when the metal filled TSV is subjected to temperature loadings, there is a very large local thermal expansion mismatch between the metal and the silicon/dielectric (e.g., Si02), which will create very large stresses at the interfaces...
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