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Prestress induced reduction of time dependent dielectric breakdown (TDDB) in MOSFETs is considered. In this study, different prestress conditions using a gated diode structure were designed. Each stress condition is set to generate hole trapping in the thin gate oxide and/or interface states to a different extent, thus allowing differentiation of their effects on TDDB. The experimental data suggest...
Drain-avalanche-induced hot hole injection in thin oxide MOS devices, used in flash-type EEPROM memory cells, is discussed. A significant amount of acceptor-like interface traps are generated by the injected hot holes, spreading into the channel region. These generated interface traps dramatically alter the channel hot carrier characteristics of the device. This can adversely affect the programmability...
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