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Tip-enhanced Rayleigh scattering images of Ge quantum dots grown on Si substrate have been observed. Changing the wavelength of the incidence light, the contrast of the images is reversed. It is found that the scattering intensity depends strongly on dielectric constants of materials under the probe. Tip-enhanced photoluminescence of In0.3Ga0.7N films has also been reported. The strong local enhancement...
High-speed 1.55 mu m GaInAsP-InP DFB lasers with Fe-doped InP current blocking layers are reported. The lasers were fabricated on corrugated p-InP substrates by two-step MOVPE for the first time. A threshold current of 30 mA and a differential quantum efficiency of 38% were obtained. A parasitic capacitance as low as 4 pF was achieved without any complicated processes.<<ETX>>
Novel concepts for enhancement (E) and depletion (D) -mode FET formation using an i-AlGaAs/n-GaAs doped-channel hetero-MISFET (DMT) and a novel self-aligned gate process technology for submicron-gate DMT LSIs based on E/D logic gates are described. The process technology uses low-damage AlGaAs/GaAs selective dry etching, thin-sidewall-assisted ion implantation, and Si-guard-ring-assisted rapid thermal...
Theoretical and experiment investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (V/sub t/) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for...
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