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With the development of the GaN-based light-emitting diodes (LEDs), the need for p-GaN contacts with low resistivity, good thermal stability, and high reflectivity has become more urgent. In this paper, a novel method of surface treatment on p-GaN to form good ohmic contacts between p-GaN and Ag was proposed. We proposed a novel structure with Ag/ultrathin-ITO/p-GaN contact which shows a low contact...
In this paper, isoelectronic doping with indium (In) in p-GaN is investigated on the basis of the thermal quenching of ultraviolet luminescence (UVL) band. A phenomenological rate-equation model is proposed as a nondestructive diagnostic technique to acquire the dopant ionization energy of p-GaN. In terms of this model, we analyze the evolution of the ionization energy of p-GaN samples grown with...
In this paper, we experimentally demonstrated a novel approach known as electroless silver plating (ESP) for the fabrication of Ag-only reflectors on vertical light-emitting diodes (VLEDs). The Ag reflector that was obtained through the ESP approach shows a higher reflectance of 83% and a lower contact resistivity of $6\ast 10^{-3}\ \Omega\cdot\text{cm}^{2}$ with p-GaN, compared with that fabricated...
Low resistance and thermally stable n-type contact to N-polar GaN is essentially important for vertical light emitting diodes (VLEDs) . In this paper, the difference of the contacts deposited on wet-etching roughed and un-roughed surface was investigated. It was found that VLEDs with contacts deposited on roughed surface exhibits lower leakage currents yet higher operating voltage. Based on this,...
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